| 摘要 |
PURPOSE:To obtain a diode which is strong against an electrostatic damage and is effectively operated by forming a hole for leading source and drain electrodes and simultaneously forming a hole at an insulating layer on the gate electrode of the diode, and further removing the gate electrode. CONSTITUTION:A thin silicon film is coated on a silicon oxide substrate 1, and N-type high density impurity regions 2, 3, 12, 13 are formed. A region therebetween becomes I-type regions 4, 14, and gate electrodes 6, 16 coated with polysilicon similarly patterned are coated further thereon. A PSG is, for example, coated entirely as a protective insulating film 7, and a part is opened to lead electrodes to form holes 9, 10, 19, 20. A hole 8 is formed to expose the electrode 6, an aluminum layer 21 is coated on the entire surface, pattern- etched to form aluminum electrodes 22-25, wired as prescribed, and the electrode 6 on the diode is removed. When the diode is formed and used as a protective diode, a gate electrode is not provided. Thus, the dielectric breakdown is not caused because of the charging even on the insulation substrate. |
