Method of controlling dopant diffusion and dopant electrical activation.

摘要

A method for preparing semiconductor components having a structure with sharply defined spatial distributions of dopant atoms with control over the degree of electricalactiva- tion of the dopant atoms. Control of spatial distribution and the degree of electrical activation of dopant atoms is achieved by implantation of dopant atoms along with rare gas atoms and another type of dopant atom within substantially the same preselected depth boundaries of a silicon or germanium substrate.