发明名称 |
VACUUM DEPOSITING COMPOUND SEMI CONDUCTORS IN ACTIVATED HYDROGEN |
摘要 |
In the case of forming a single-layered or multilayered compound semiconductor film such as a GaAs thin film for a semiconductor laser, an EL light-emission element and the like in a molecular beam epitaxis method, a vacuum deposition method or a sputtering method, the method of the invention is to prevent the compounds from deteriorating and decomposing by making activated hydrogen coexist therein. |
申请公布号 |
GB2127439(B) |
申请公布日期 |
1987.01.14 |
申请号 |
GB19830025830 |
申请日期 |
1983.09.27 |
申请人 |
* KONISHIROKU PHOTO INDUSTRY CO LTD |
发明人 |
NASANORI * SHINDO;SHIGERU * SATO;AKINARI * KANEKO |
分类号 |
C23C14/00;C30B23/02;H01L21/20;H01L21/203;H01L21/363 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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