| 摘要 |
A semiconductor memory device includes charge storage type memory cells, word lines and a bit line connected to the memory cells, a sense amplifier for detecting the memory data on the bit line, and a voltage push-up circuit for setting up a potential on the bit line. The voltage push-up circuit at first sets the potential on the bit line at a power supply voltage level after the memory data having a high logic level is detected by the sense amplifier, and then pushes up the potential on the bit line to a higher potential level than the power supply voltage.
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