发明名称 |
Voltage-controlled type semiconductor switching device |
摘要 |
A voltage-control type semiconductor switching device is disclosed which includes a pair of controlled electrodes to which a control voltage signal is supplied, and a semiconductive layer formed between the electrodes so as electrically insulative from the electrodes through insulative layers. The semiconductive layer has a channel region and a carrier-storage region which is substantially nonconductive. The channel region is formed laterally along the longitudinal direction of the electrodes, thereby allowing majority carriers such as electrons of the semiconductive layer to flow in the lateral direction. In the current cut-off mode, the carrier-storage region temporarily stores the carriers which move in the direction of thickness of the semiconductive layer due to the electric field created by the voltage. In the current conduction mode, the carrier-storage region releases the carriers stored therein toward the channel region.
|
申请公布号 |
US4636824(A) |
申请公布日期 |
1987.01.13 |
申请号 |
US19860850065 |
申请日期 |
1986.04.07 |
申请人 |
IKOMA, TOSHIAKI;TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
IKOMA, TOSHIAKI;MAEDA, HAJIME;YANAI, HISAYOSHI;DANG, RYO;SHIGYO, NAOYUKI |
分类号 |
H01L29/74;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/74 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|