发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device including at least two groups, each of said groups including a plurality of memory cell array blocks. The number of the memory cell array blocks which are activated in one group is made different from the number of memory cell array blocks which are activated in another group by providing a sequential circuit, thus reducing the maximum power consumption.
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申请公布号 |
US4636982(A) |
申请公布日期 |
1987.01.13 |
申请号 |
US19850729200 |
申请日期 |
1985.05.01 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKEMAE, YOSHIHIRO;NAKANO, TOMIO;SATO, KIMIAKI |
分类号 |
G11C11/401;G11C8/12;G11C11/4076;G11C11/408;G11C11/4096;G11C11/4097;(IPC1-7):G11C7/00;G11C11/24 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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