发明名称 |
Insulated gate-controlled thyristor having shorted anode |
摘要 |
A new semiconductor power device, suitable for electrical switching in automotive applications, is proposed. This device combines the low specific on-resistance achievable with bipolar regenerative switching devices with the convenience of insulated gate control of not only turn-on but also turn-off. A device structure is presented that also includes a pinch resistance effect to more rapidly produce turn-off. The anode region of the device is electrically shorted to its contiguous N-type region.
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申请公布号 |
US4636830(A) |
申请公布日期 |
1987.01.13 |
申请号 |
US19840667827 |
申请日期 |
1984.11.02 |
申请人 |
GENERAL MOTORS CORPORATION |
发明人 |
BHAGAT, JAYANT K. |
分类号 |
H01L29/06;H01L29/10;H01L29/423;H01L29/745;H01L29/749;(IPC1-7):H01L29/72;H01L29/08;H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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