| 发明名称 |
Photodetector integrated circuit |
| 摘要 |
An integrated circuit incorporates a PIN diode connected to the gate of an FET. The semiconductor layers used to construct the diode are also the layers used to construct the FET, and provide a relatively low capacitance per unit area for the diode compared with that of the gate of the FET.
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| 申请公布号 |
US4636829(A) |
申请公布日期 |
1987.01.13 |
| 申请号 |
US19840641881 |
申请日期 |
1984.08.16 |
| 申请人 |
ITT INDUSTRIES, INC. |
发明人 |
GREENWOOD, JOHN C.;THOMPSON, GEORGE H. B. |
| 分类号 |
H01L27/14;H01L21/306;H01L21/8252;H01L27/144;H01L31/10;H01L31/105;(IPC1-7):H01L27/14;H01L31/00 |
主分类号 |
H01L27/14 |
| 代理机构 |
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代理人 |
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| 主权项 |
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