发明名称 Semiconductor device having non-volatile storage transistors
摘要 A semiconductor device includes storage cells which have a non-volatile storage transistor and an access transistor connected in series therewith, whereby parts of a word (bytes) can be selected for writing and erasing. By means of a second access transistor, which is added to each storage cell, and by means of switches which are controlled by lines used for driving these second access transistors, the current dissipation is reduced and in non-selected storage cells the potential of the insulated control electrodes of the storage transistors is fixed, as a result of which the risk of undesired change of the information content is reduced.
申请公布号 US4636984(A) 申请公布日期 1987.01.13
申请号 US19840578442 申请日期 1984.02.09
申请人 U.S. PHILIPS CORPORATION 发明人 NEUKOMM, HANS R.
分类号 H01L27/112;G11C16/04;G11C17/00;H01L21/8246;H01L21/8247;H01L29/788;H01L29/792;(IPC1-7):G11C11/40;H01L29/78 主分类号 H01L27/112
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