发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PURPOSE:To attain rewriting by forming a parallel connection body between a fuse to be blown by current supply having the 1st current value and a semiconductor element to be damaged at its junction by current supply having the 2nd current value. CONSTITUTION:When a writing current having the 1st current value 11 is supplied from the 1st terminal 1 to the 2nd terminal 2, the fuse 5 is blown and the 1st terminal 1 is electrically opened from a node 7. At that time, the semiconductor element 3 is not damaged because the writing current value is low. Thereby, the 1st terminal 1 is electrically opened from the 2nd terminal 2 and a logical value '1' e.g. is shown. When a writing current having the 2nd current value 12 is supplied from the 1st terminal 1 to the 2nd terminal 2 under said state, the junction of the semiconductor element 3 is damaged and electrically shorted. Therefore, a current to be supplied from the 1st terminal 1 to the 2nd terminal through the shorted semiconductor element 3 and a P-N junction diode element 4 and a logical value '0' e.g. is shown to attain rewriting.</p>
申请公布号 JPS626495(A) 申请公布日期 1987.01.13
申请号 JP19850145301 申请日期 1985.07.01
申请人 MITSUBISHI ELECTRIC CORP 发明人 HIRATA YOSHIHIKO
分类号 G11C17/14;G11C17/06 主分类号 G11C17/14
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