| 摘要 |
Disclosed is a self-aligned GaAs, lightly doped drain metal-semiconductor field effect transistor. In one embodiment, the device consists of a shallow n- active channel region formed on a GaAs substrate, a Schottky gate overlying the n- region and highly doped and deep n+ source and drain regions formed on either side of the gate. In the channel region between the gate edges and the source/drain are positioned n-type source/drain extensions which have an intermediate depth and doping concentration to minimize the device series resistance, suppress short channel effects and permit channel length reduction to submicron levels. In a second embodiment, p-type pockets are provided under the source/drain extensions to better control the device threshold voltage and further reduce the channel length. In terms of the method of fabrication of the first embodiment, starting with a GaAs substrate an n- semiconductor layer is formed in the device active region. Next, a Schottky gate is formed in direct contact with the n- layer. Next, a dielectric layer is deposited and reactive ion etched (RIE), forming gate sidewalls. Then, n-type source/drain extensions are formed followed by repetition of the dielectric layer deposition and RIE to enlarge the gate sidewalls. Finally, source/drain are implanted. To form the second structure a p-type ion implantation is accomplished prior to or after the source/drain extension forming step to form the deep p-type pockets.
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