发明名称 Method and apparatus for examining electrostatic discharge damage to semiconductor devices
摘要 A method and apparatus for examining the susceptibility of a semiconductor device to damage by discharge of electrostatic charge on a dielectric package of the device. The package is electrically charged, with an input or output pin of the device disconnected at least from a reference potential of the charging source. The input or output pin is then connected to the reference potential through a load impedance with the charging continued, to effect discharging of the charge on the package. Thus, the electrostatic breakdown voltage of the device can be determined with accuracy by testing of the device after each charging and discharging operation at successively higher charging potentials.
申请公布号 US4636724(A) 申请公布日期 1987.01.13
申请号 US19840653921 申请日期 1984.09.24
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 FUKUDA, YASUHIRO;SUGANUMA, IKUO
分类号 G01R31/12;G01R31/26;G01R31/3161;H01L21/66;(IPC1-7):G01R31/26 主分类号 G01R31/12
代理机构 代理人
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