发明名称 |
Method and apparatus for forming low resistance lateral links in a semiconductor device |
摘要 |
A method and apparatus for reliably forming low resistance links between two aluminum conductors deposited on an insulating polysilicon or amorphous silicon layer, employ a laser to bridge a lateral gap between the conductors. The apparatus and method are ideally suited for implementing defect avoidance using redundancy in large random access memories and in complex VLSI circuits. Only a single level of metal is employed and leads to both higher density and lower capacitance in comparison to prior techniques. Resistances in the range of one to ten ohms can be achieved for gap widths of approximately two to three microns.
|
申请公布号 |
US4636404(A) |
申请公布日期 |
1987.01.13 |
申请号 |
US19840651230 |
申请日期 |
1984.09.17 |
申请人 |
MASS. INSTITUTE OF TECHNOLOGY |
发明人 |
RAFFEL, JACK I.;YASAITIS, JOHN A.;CHAPMAN, GLENN H. |
分类号 |
H01L23/525;(IPC1-7):B05D3/06;B05D5/12;B23K9/00 |
主分类号 |
H01L23/525 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|