| 摘要 |
PURPOSE:To improve characteristics and to simplify the manufacturing steps by interposing an amorphous semiconductor layer as a semiconductor layer between an upper electrode and a lower electrode, and coating an intermediate electrode disposed in the amorphous layer with an insulating film. CONSTITUTION:A thin chromium film is coated on a glass substrate 1, a lower electrode 2 is patterned, an amorphous silicon layer 3 is accumulated as a semiconductor layer, and an amorphous silicon nitride layer is accumulated as an insulating film 6. Further, after a thin chromium film is coated on the upper layer, an intermediate electrode 5 is patterned. Thereafter, the amorphous silicon nitride layer is accumulated as an insulating layer 6. The layer 6 is then selectively removed by reactive ion etching, and it is so patterned that the electrode 5 is surrounded by the silicon nitride layer as the layer 6. Further, the layer 3 is again formed, a thin chromium film is coated, patterned, and an upper electrode 4 is formed. Thus, it is enabled to be accelerated, increased in area, and simplified in the manufacturing steps. |
