HIGH-EFFICIENCY INDIRECT TRANSITION SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT

摘要

A light-emitting element formed of an indirect transition semiconductor made of a semiconductor material having a high binding energy of an exciton is characterized in that an active layer of the indirect transition semiconductor or an active region by pn junction is formed, the element has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.