| 摘要 |
PURPOSE:To enable formation of the drain layer on the circumference of the V groove aperture section with a narrow width and also to increase the degree of integration for the subject semiconductor device by a method wherein side etching is performed for the master pattern to be used for the formation of the V groove and then impurities are lead in. CONSTITUTION:A P<+> Si layer 2 and a P<-> Si layer 3 are formed successively, and an SiO2 film 4, and an Si3N4 film 5 are deposited. A V groove mask pattern 7 and an electrode window mask pattern 8 are formed using a photolithographical technique, then a P channel cut layer 12 and a separating layer 13 are formed. The Si3N4 film 5, exposed to three directions of end face, is side-etched and a groove matched pattern 14 is formed. Then drain layers 16, 16' and an SiO2 film 17 are formed by an ion injection and the like, and the V groove matched pattern 14 is removed and a V groove 20 is formed. As a result, the drain layer 16 having a narrow width can be formed on the circumference of the V groove 20. |
