PRODUCTION OF PHOTOMASK

摘要

PURPOSE:To form a photomask having a sharp pattern by forming a resist film pattern consisting of a novolak deriv. on a substrate and forming a light shielding film on the substrate by a lift off method using such pattern. CONSTITUTION:The resist film 23 consisting of a novolak naphthoquinone diazide sulfonate is first formed on the transparent substrate 21. The master pattern 25 is then exposed thereto to form the unirradiated part 23a and irradiat ed part 23b of the film 23. The resist film is thereafter developed by an org. solvent to remove the part 23a. Chromium or the like is deposited by evapora tion on the transparent substrate 21 on which the resist film pattern 27 is formed to deposit the light shielding film 29 thereon. The light shielding pattern 31 is then formed on the substrate 21 by the lift off method. The light shielding film pattern is formed on the photomask by the lift off method using the novolak deriv. in the above-mentioned manner and therefore the photomask is produced more easily than by etching and the sharp light shielding film pat tern is formed.