| 摘要 |
PURPOSE:To suppress shrinkage stress induced in a pellet after a heat treatment and avoid deterioration of performance of a semiconductor device by providing grooves with predetermined depths near respective elements of a semiconductor integrated circuit in the semiconductor device. CONSTITUTION:In the neighborhood of a resistor 6 formed on an Si epitaxial layer 4, one or a plurality of grooves 5, which have nearly the same depths as the resistor 6 and widths of 2-5mum, are formed. With this configuration, a shrinkage stress induced in the pellet after a heat treatment in the assembly process such as die-bonding, especially the component parallel to the pellet surface, is relieved by the grooves 5. With this constitution, the deterioration of performance of the semiconductor device can be avoided. |
