| 摘要 |
PURPOSE:To control the gate length, etc. of BICOM structure, etc. easily without elevating resistivity by using at least two or more of N type impurity diffusion processes controlling each electrical characteristic when forming an N type low resistivity impurity region. CONSTITUTION:Conditions such as 820 deg.C, forty-five min and POCl3 of a not less than 8% flow rate on the source-drain sides and 950 deg.C, thirty min and POCl3 of a not more than 1% flow rate on the emitter side are brought, and approximately 22OMEGA/D is obtained as source-drain side layer resistance and approximately 12OMEGA/D as emitter side layer resistance after a pre-deposition process. Source- drain side layer resistance of 8OMEGA/D and diffusion depth of 2.0mum and emitter side layer resistance of 8OMEGA/D and diffusion depth of 2.0mum are acquired through drive-in diffusion for sixty min at 1,000 deg.C. Source-drain side layer resistance of 7OMEGA/D and diffusion depth of 2.2-2.3mum and emitter side layer resistance of 7OMEGA/D and diffusion depth of 2.7-3.2mum are obtained through a thermal process for sixty of ninety min at 1,000 deg.C, and the progress of the diffusion of source- drain is inhibited minimally during the control of hFE of a bipolar transistor. |
