| 摘要 |
<p>PURPOSE:To obtain an abrasion-resistant layer having a sufficient hardness, good chemical stability and little internal stress, by providing a thin film of an Si-Al-N-O system by vapor growth with a specified abrasion-resistant layer as a parent material. CONSTITUTION:The uppermost thin film abrasion-resistant layer 7 is constituted of a thin film of an Si-Al-N-O system provided by vapor growth with (Si3 N4)100-x(AlN)x (wherein 5<=x<=60wt%) as a parent material (target), whereby an abrasion-resistant layer having good chemical stability, little internal stress and excellent abrasion resistance can be obtained. In the composition of the parent material is preferably so set that x=10-50, most preferably, x=10-30, from the viewpoints of properties of the formed film and the film-forming speed (sputtering rate or the like). Accordingly, since the layer 7 thus obtained has a dense structure and a low porosity, oxygen permeability can be reduced, and oxidation of a heating resistor layer 3 can be prevented, thereby enhancing durability.</p> |
