发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To prevent erroneous action by informing and controlling the border time point of the first and second respective cycles from an external circuit in the relation of the pulse width of respective write and chip enable signals. CONSTITUTION:From when respective chip and write enable signals the inverse of CE and the inverse of WE are both a logic '0', the first cycle is started, and by the faster risen signal out of these, writing is executed from an input buffer 5 to a column latch 1. The fall point of the inverse of WE is detected to be earlier than the fall point of the inverse of CE, and at the rise point of the inverse of CE, the inverse of WE is a logic 0. Then, at the rise point of the inverse of CE, the external writable signal is set to the logic '0' and the first cycle is completed. Thereafter, a memory cell array 7 recognizes that the prescribed assembly of the inverse of WE and the inverse of CE is the notice of the cycle converting point, and is shifted to the second cycle at the rise point of the inverse of WE.</p>
申请公布号 JPS623496(A) 申请公布日期 1987.01.09
申请号 JP19850143198 申请日期 1985.06.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 TERADA YASUSHI;NAKAYAMA TAKESHI
分类号 G11C17/00;G11C16/02;G11C16/06;G11C29/00;G11C29/04;H01L21/8247;H01L29/78;H01L29/788;H01L29/792 主分类号 G11C17/00
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