| 摘要 |
PURPOSE:To obtain a large-area and low-cost double-hetero structure semiconductor without necessitating the deterioration of the hetero interfaces and the formation of two kinds of growth gas atmosphere by a method wherein the flow condition is set constant, the crystal growth temperature is set in such a way as to fulfill a thermodynamic rate-determining condition, and the active layer and the second clad layer are grown continuously. CONSTITUTION:Such a growth gas atmosphere 1 which grows an In0.35Ga0.65 As0.29P0.71 layer 23 existing in the nonmiscibility region is formed in a growing chamber 2. A semiconductor crystal 13 to be adhered on a substrate holder 14 is exposed in this growth gas atmosphere 11. The crystal growth temperature at that time is set at 740 deg.C ini such a way as to fulfill a thermodynamic ratedetermining condition. The In0.35Ga0.65As0.29P0.71 layer 23 used as the active layer, and an In0.12Ga0.88As0.28P0.72 layer 24 used as the second clad layer are continuously on an InGaP laye 22 used as the grown first clad layer. As a result, the DH structure compound semiconductor in the constitution containing the InGaAsP layer having an energy gap of 1.72e as the active layer 23 can be made uniformly in the surface of a substrate 21. |
