发明名称 METHOD OF MAKING SILICON-INFILTRATED REACTION-BONDED SILICOM CARBIDE BODIES
摘要 Silicon-infiltrated, reaction-bonded silicon carbide molded bodies for application in machine building are produced by means of a siliconizing apparatus, comprising a graphite plate coated with boron nitride, a porous silicon carbide plate coated with a layer of boron nitride, silicon carbide and carbon and a layer of lumpy metallic silicon inserted between the two plates. Furthermore, following the heating and solidification of the liquid silicon, wherein due to the increase in volume of the silicon, beads of silicon appear at the surface of the molded body, these may be easily removed when the infiltrated silicon carbide molded bodies are cooled in a nitrogen atmosphere.
申请公布号 DE3367764(D1) 申请公布日期 1987.01.08
申请号 DE19833367764 申请日期 1983.07.29
申请人 HOECHST CERAMTEC AKTIENGESELLSCHAFT 发明人 POLLAK, WERNER, DIPL.-ING.;SPECHT, GERHARD;BLECHA, MICHAEL, DR. DIPL.-CHEM.
分类号 C04B35/65;C04B35/573;(IPC1-7):C04B35/56 主分类号 C04B35/65
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