| 摘要 |
1. High-voltage integrated semiconductor switch comprising VMOS and bipolar transistors, characterized by the following features : - an n**- type semiconductor substrate (2) providing both a drain region for the VMOS transistors and a base for pnp transistors, with the base current of the pnp transistors and the drain current of the MOS transistors being equel to each other ; - a p type semiconductor region (4) disposed in the semiconductor substrate (2) and containing the V-shaped gate regions ; - p**+ type semiconductor regions (3) extending through the p type semiconductor region (4) to the substrate (2) and providing a collector and an emitter for the pnp transistor ; - a p**+ type semiconductor layer (1) disposed on the side of the semiconductor substrate opposite the p type semiconductor region (4) and providing an emitter and a collector for the pnp transistor, and - n**+ type regions disposed in the p type semiconductor region (4) and providing source regions for VMOS transistors. |
