发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE:To enhance the gamma value of a positive type photoresist by using for this resist a combination of a quinone diazide compd. and a novolak resin synthesized from one of specified phenols in the presence of an org. acid salt of a bivalent metal higher in electric positivity than H. CONSTITUTION:One of compds. or a mixture of compds. represented by the formula, R being H or 1-4C alkyl, such as phenol, cresoln, or their isomer, is used for the material of a novolak resin. An average C number of the substituent of said compd. per one phenol nucleus is 0.5-1.5, and a content of said compd. having the substituent at the o- or p-position with respect to the hydroxide group is <=50mol%. For example, a m- and p-cresol mixture in the following range is used: m-cresol/p-cresol <=1. As a catalyst, the org. acid salt of a bivalent metal higher in electric positivity than H2, such as Mn or Zn, is used, and the phenol is partially additionally condensed with formaldehyde in a pH of 4-7, and further, addition condensation reaction is executed in the presence of an acid catalyst. The gamma value is controlled by adjusting the reaction times of the first and second stages.
申请公布号 JPS60159846(A) 申请公布日期 1985.08.21
申请号 JP19840016258 申请日期 1984.01.31
申请人 SUMITOMO KAGAKU KOGYO KK 发明人 FURUTA AKIHIRO;HANABATAKE MAKOTO;YASUI MASAAKI;HIROAKE OSAMU;JINNO NAOMI
分类号 G03C1/72;C08G8/00;C08G8/08;C08L61/00;C08L61/04;C08L61/06;G03F7/022;G03F7/023;H01L21/027 主分类号 G03C1/72
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