| 摘要 |
PURPOSE:To stabilize a silicon semiconductor device to a temperature change extending over a wide range, and to facilitate manufacture by forming a reinforc ing coating containing silicon particles and a binder onto one surface of an silicon wafer when the semiconductor device is shaped onto one surface of the silicon wafer through treatment and the other surface is ground and thinned. CONSTITUTION:A P-type impurity is implanted to a wafer to form a P-type layer 6, and an N-type impurity is implanted to shape an N-type channel layer 4. The concentration of the N-type impurity is controlled and varied through a predetermined method, and similar element regions 12 are superposed to related element regions in the layer 6 and determined. An silicon dioxide layer 8 and an aluminum layer 10 are shaped onto the front of the wafer, and an exposed section in the layer 10 is passivated and treated. A metallizing process is completed, the front of the wafer is ground up to approximately 10mum depth, and a reinforcing coating 16 is applied onto the front of the treated wafer. A coating material is constituted of silicon particles and a binder, and silicon particles are bound in a glassy form or a ceramic shape and applied to the silicon wafer when the coating material is treated properly.
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