| 摘要 |
PURPOSE:To enable a light source for transmitting an optical information having high cut-off frequency and high luminance by forming a hetero-interface between a light-emitting layer and a carrier confinement layer. CONSTITUTION:The title light-emitting diode has a liquid crystal for a substrate having a composition of GaAs1-zPz(0.06<=Z<=0.35), a light-emitting layer 3 consisting of an InxGa1-xAsyP1-y epitaxial mixed crystal, and carrier confinement layers 2, 4 composed of an epitaxial mixed crystal having a band gap wider than the light-emitting layer, and hetero-interfaces 5 are shaped among the light-emitting layer 3 and the carrier confinement layers 2, 4. It is preferable that the carrier confinement layers 2 and 4 with thickness of approximately 1-2mum are used, but ones with thickness more than that may be employed as required. The preferable thickness of the light-emitting layer 3 extends over 0.3-2mum, and thickness by which the best result can be acquired is in a range 0.5-1.5mum. |
