| 摘要 |
An improved power semiconductor module (12a, 12b) includes a semiconductor die (14) which typically embodies a power semiconductor die such as a transistor or Darlington transistor pair thereon. The die (14) is fastened by solder bonding to the top side of an electrically conductive supporting plate (16) which has approximately the same thermal co-efficient of expansion as the die itself. Overlying the die (14) is a ceramic cover (18) whose lower edges (20) are typically metallized for solder bonding to the supporting plate (16) to obtain a hermetic seal about the die. Solder bond electrical connection to the top side of the die (14) is facilitated by electrodes (22, 24) which extend through passageways (21a 21b) in the ceramic die cover (18) for contact with the die. Each of the electrodes (22, 24) extending through the ceramic die cover (18) is typically solder bonded to the cover so that mechanical and thermal stresses are transmitted to the ceramic die cover (18) and not to the die (14). The ceramic die cover (18) not only protects the die (14) from mechanical and thermal stress, but also facilitates manufacturing of the semiconductor module (12a 12b) as the ceramic die cover (18) acts as an alignment and support fixture for the electrodes (22, 24) during assembly. |
