发明名称 GROWING METHOD OF CRYSTAL
摘要 PURPOSE:To increase effective segregation coefficients of impurities, and to obtain a single crystal having uniform characteristics in good yield by impressing a magnetic field having specified intensity to a molten body of an electrically conductive substance containing impurities in the direction vertical to the surface. CONSTITUTION:A molten body 4 of an electrically conductive substance contg. impurities is charged into a crucible 3 in an almost cylindrical vacuum vessel 1, and heated with a heater 2. An electric current in the specified direction is simultaneously impressed on a coil 12 and a yoke 13 of a magnetic field impressing device 10 which is provided around the outer circumference of th vessel 1 to generate a line of magnetic force 11 having specified intensity in the direction vertical to the surface of the molten body 4, and the magnetic field is impressed. Then the crucible 3 is rotated in the direction as indicated by the arrow through a supporting shaft 6, and a seed 5' attached to the leading end of a chuck 7 is brought into contact with the surface of the molten body 4. The seed 5' is subsequently pulled up while revolving in the direction as shown by the arrow to grow a single crystal 5 at the lower end of the seed 5'.
申请公布号 JPS60161391(A) 申请公布日期 1985.08.23
申请号 JP19840016256 申请日期 1984.01.31
申请人 SUMITOMO KINZOKU KOGYO KK;OOSAKA CHITANIUMU SEIZOU KK 发明人 KOBAYASHI SUMIO;KITAURA KIICHIROU
分类号 C30B15/00;C30B15/30 主分类号 C30B15/00
代理机构 代理人
主权项
地址