| 发明名称 |
FET driver circuit with mask programmable transition rates |
| 摘要 |
A field effect transistor driver circuit figured to have different rates of change of the output signal depending on fabrication mask designation of selected transistors to be either depletion or enhancement type devices.
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| 申请公布号 |
US4634893(A) |
申请公布日期 |
1987.01.06 |
| 申请号 |
US19850705296 |
申请日期 |
1985.02.25 |
| 申请人 |
NCR CORPORATION |
发明人 |
CRAYCRAFT, DONALD G.;PHAM, GIAO N. |
| 分类号 |
G11C7/06;G11C7/14;G11C7/18;G11C17/12;(IPC1-7):H03K5/12;H03K17/693;H03K19/092;H03K19/094 |
主分类号 |
G11C7/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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