METAL-INSULATOR-METAL CAPACITOR HAVING HIGH CAPACITANCE AND METHOD OF FABRICATING THE SAME

摘要

A metal-insulator-metal capacitor is provided to obtain capacitance of enough capacity by lowering equivalent oxide thickness below 11Å as a thallium niobium oxide(TaNbO) film is used as a dielectric film. A metal-insulator-metal capacitor(280) comprises: a first metal layer(220) arranged on a semiconductor substrate(200) as a capacitor lower electrode film; a tantalum niobium oxide(TaNbO) film(240) arranged on the first metal layer as a capacitor dielectric film; and a second metal layer(260) arranged on the tantalum niobium oxide film as a capacitor top electrode film. An interlayer insulating film(202) is arranged between the semiconductor board and the metal-insulator-metal capacitor(280). A conductivity contact plug(204) which passes through the interlayer insulating film is arranged in order to electrically connect the first metal layer of the metal-insulator-metal capacitor to an impurity region within a semiconductor substrate. The top of the conductivity contact plug is contacted in the first metal layer. The lower part of the conductivity contact plug is contacted in the semiconductor substrate. The first metal layer has a cylinder type structure.