METHOD OF CONTROLING THE SHEET RESISTANCE IN IMPURITY REGION OF SEMICONDUCTOR DEVICE

摘要

A method for controlling a resistance in an impurity region of a semiconductor device is provided to lower a threshold voltage by performing a rapid thermal annealing. An impurity ion(110) is implanted into a semiconductor substrate(100) like a silicon substrate. An impurity region is formed by diffusing and activating the impurity ion by performing a rapid thermal annealing on the semiconductor substrate to which the impurity ion is implanted. The impurity ion implantation is performed by a 0 degree ion implantation method. The sheet resistance is increased in the impurity region by performing the rapid thermal annealing within a temperature range to increase the sheet resistance in the impurity region according to the temperature rise. The rapid thermal annealing is performed under the oxygen or the hydrogen atmosphere. If the rapid thermal annealing is performed under the oxygen atmosphere, a thin oxidation layer formed on the surface is removed through the cleaning after the rapid thermal annealing. If the rapid thermal annealing is performed under the hydrogen atmosphere, the resistance is increased by inducing deactivation of the impurity ion by the hydrogen.