| 摘要 |
A vertical type semiconductor light emitting device and a manufacturing method thereof are provided to reduce a strain due to a laser beam by forming an isolation film with an indium oxide film on a sapphire substrate and growing the light emitting structure. A vertical type semiconductor light emitting device(100) includes an isolation film(116), a light emitting structure(117), a reflective electrode(121), and a conductive support substrate(123) on a base substrate(111) to be separated. The isolation film includes an indium tin oxide film inside(113) and an external insulating layer(115). The indium tin oxide film is formed on the base substrate. The insulating layer is formed on the indium tin oxide film. The isolation film forms the light emitting structure on the base substrate. The plurality of light emitting structures are separated by not growing the light emitting structure on the surface of the isolation film.
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