发明名称 |
High speed-low power consuming IGFET integrated circuit |
摘要 |
An improved semiconductor device operable at a high-speed and with a low power consumption is disclosed. The device comprises a common impurity-doped region, a first insulated gate field effect transistor utilizing the common impurity-doped region as a drain thereof, a second insulated gate field effect transistor utilizing the common impurity-doped region as a drain thereof, control means for controlling switching operations of the first and second transistor at the same time and means for deriving an output signal from the common impurity-doped region.
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申请公布号 |
US4635088(A) |
申请公布日期 |
1987.01.06 |
申请号 |
US19840661837 |
申请日期 |
1984.10.17 |
申请人 |
NIPPON ELECTRIC CO., LTD. |
发明人 |
EGUCHI, HIROTUGU |
分类号 |
H01L21/822;H01L21/3205;H01L21/82;H01L21/8238;H01L23/52;H01L27/04;H01L27/088;H01L27/092;H03K19/017;H03K19/0944;(IPC1-7):H01L29/78;H01L27/02;H01L23/48 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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