INFRARED DETECTING ELEMENT

摘要

PURPOSE:To provide an IR detecting element having a small size and high sensitivity and to easily manufacture said element by forming a thin film transistor on the same substrate as the substrate of a thin film pyroelectric element and using one end of a lower electrode of the pyroelectric element as a gate electrode of the thin film transistor. CONSTITUTION:A thin platinum electrode 2 is formed to an array shape by sputtering onto an MgO single crystal substrate 1 polished to a specular surface. The thin pyroelectric material film 3 is then formed by sputtering. An Al-Ta-O layer 4 is formed thereon by vacuum deposition and further a CdSe film 5 doped with In to be formed as an n-type semiconductor is formed thereon a vacuum deposition. An NiCr photodetecting electrode 6 is formed on the thin film 3 and a source electrode 7 and a drain electrode 8 are formed on the film 4 by the vapor deposition of Al. The substrate 1 is finally etched with a phosphoric acid to form an aperture 9 to prevent the diffusion to heat to the substrate in the photodetecting part. Since the CdSe semiconductor layer responds to light, black resin is coated on the film 5 to shield said film from light.