| 发明名称 |
MEMORY DEVICE |
| 摘要 |
<p>Memory device A method of determining the conductance state of a non-volatile memory device switchable between high and low conductance states is provided. The device comprises at least one p-type amorphous or microcrystalline semiconductor and an n or i-type layer. The device is irradiated with light to produce a photovoltaic response which is used to determine the conductance state.</p> |
| 申请公布号 |
CA1216376(A) |
申请公布日期 |
1987.01.06 |
| 申请号 |
CA19840469600 |
申请日期 |
1984.12.07 |
| 申请人 |
BRITISH PETROLEUM COMPANY P.L.C. (THE) |
发明人 |
HOCKLEY, PETER J.;THWAITES, MICHAEL J. |
| 分类号 |
G11C11/34;G11C7/00;G11C13/04;G11C17/00;H01L21/8247;H01L27/14;H01L29/788;H01L29/792;H01L31/10;(IPC1-7):G11C8/00;G11C17/06 |
主分类号 |
G11C11/34 |
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