发明名称 Method for making semiconductor crystals
摘要 A planar solid-state recrystallization process for growing mercury cadmium telluride (MCT) crystals suitable for semiconductor applications, in which molten MCT material is solidified in a horizontal sealed ampoule having a substantial portion of its lower external surface (i.e. a part of the ampoule surface which contains molten material) in heat-transfer contact with a heat sink, and having no substantial portion of the vapor-containing segment of the external ampoule wall in contact with that heat sink.
申请公布号 US4634493(A) 申请公布日期 1987.01.06
申请号 US19830544553 申请日期 1983.10.24
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE 发明人 DEVANEY, CHRISTOPHER M.;MARTINEAU, ROBERT J.;MILES, JOHN L.;WONG, THEODORE T. S.
分类号 C30B1/02;(IPC1-7):C30B21/02 主分类号 C30B1/02
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