发明名称 |
Method for making semiconductor crystals |
摘要 |
A planar solid-state recrystallization process for growing mercury cadmium telluride (MCT) crystals suitable for semiconductor applications, in which molten MCT material is solidified in a horizontal sealed ampoule having a substantial portion of its lower external surface (i.e. a part of the ampoule surface which contains molten material) in heat-transfer contact with a heat sink, and having no substantial portion of the vapor-containing segment of the external ampoule wall in contact with that heat sink.
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申请公布号 |
US4634493(A) |
申请公布日期 |
1987.01.06 |
申请号 |
US19830544553 |
申请日期 |
1983.10.24 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
DEVANEY, CHRISTOPHER M.;MARTINEAU, ROBERT J.;MILES, JOHN L.;WONG, THEODORE T. S. |
分类号 |
C30B1/02;(IPC1-7):C30B21/02 |
主分类号 |
C30B1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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