| 摘要 |
PURPOSE:To contrive improvement in cleanliness and mass production of wafers by a method wherein the moisture located on a substrate is evaporated using microwaves. CONSTITUTION:Magnetrons 5 and 5' are arranged at the upper part of a quartz tunnel 4, microwaves of 2.5GHz are generated, the moisture on the substrate to be conveyed is evaporated in a moment, and the efficiency of drying work of the substrate is increased by supplying (6 and 6') dry air from the upper part of the tunnel 4. At this time, if no dust or impurities are mixed in the pure water of the cleaning liquid on the surface of the Si substrate, a complete cleanliness can be maintained on the surface of the substrate. According to this method, the adhesion of dust grains is less than the centrifugal drying method heretofore in use, and it has no possibility of generation of scratches. |
