| 摘要 |
A diode device can include an enhancement mode gallium nitride transistor having a gate, a drain and a source, wherein the gate is connected to the drain to enable the device to perform as a diode. In some embodiments, an integrated switching-diode is described that includes a substrate, a gallium nitride switching transistor on the substrate and a free wheeling diode on the substrate and coupled to the switching transistor. |
