| 发明名称 |
EPITAXIALER GALLIUMARSENIDPHOSPHID-MISCHKRISTALLWAFER |
| 摘要 |
An epitaxial wafer for producing arrays of GaAsP-LEDs comprises, in the GaAs1-xPx layer with varying X, a layer region(s) with a discontinuous variance of x along the thickness of the GaAs1-xPx layer. This layer region(s) contribute to a uniformity in the brightness of the light emission of LEDs formed in the epitaxial wafer. |
| 申请公布号 |
DE3620466(A1) |
申请公布日期 |
1987.01.02 |
| 申请号 |
DE19863620466 |
申请日期 |
1986.06.19 |
| 申请人 |
MITSUBISHI MONSANTO CHEMICAL CO.,LTD.;MITSUBISHI CHEMICAL INDUSTRIES LTD. |
发明人 |
FUJITA,HISANORI;KANAYAMA,MASAAKI;OKANO,TAKESHI |
| 分类号 |
C30B29/40;C30B25/02;H01L21/20;H01L21/205;H01L27/15 |
主分类号 |
C30B29/40 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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