| 摘要 |
PURPOSE:To obtain the title semiconductor device which can be operated at high speed with a high rate of gain and having no substrate shifting in threshold voltage when the device is brought in the state of short channel and also having no possibility of deterioration of K-value and the like by a method wherein a carrier is confined in a narrow-gapped one conductive type channel layer. CONSTITUTION:An N-type channel layer 5 is formed with InGaAs having a narrow band gap when compared with a semi-insulating GaAs substrate, and also a P-type impurity introducing layer 6, with which a Schottky barrier is raised by forming a camel type Schottky junction, is formed on the surface of the above-mentioned channel layer 5. As the band gap of InGaAs is narrow when compared with InGaAs, the possibility of the electrons running between and N<+> type GaAs source region 9 and an N<+> type GaAs drain region 10 and passes the side of the substrate 1, can be eliminated.
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