| 摘要 |
PURPOSE:To enable the change of the intensity of light of the title laser device by a method wherein two kinds of regions having different forbidden band width or the thickness of a quantum well layer are formed, thereby enabling to emit the light spot having two different wavelength with the controlled lateral mode of oscillation. CONSTITUTION:First, an active layer 3 of quantum well structure, an n-GaAlAs clad layer 4, and an n-GaAs layer are successively formed on an n-GaAs substrate 1 using an organic metal thermal decomposition vapor-phase growing method (MOCVD method). Then, a p-GaAs cap layer 6 and a Zn diffusion region 7 are formed by diffusion Zn on the n-GaAs layer and the clad layer 2 by performing a selective diffusion method. Subsequently, an n-electrode 8 is formed using a vapor-deposition method, and after an n-electrode is formed on the whole surface on the cap side, a stripe-like n-electrode 10 is formed by performing an etching. A p-electrode is formed on both sides of the electrode 10 using a vapor-deposition method and a lift-of method. Lastly, a groove 11 is provided by applying an etching to the p-electrode and the GaAs layer located on both sides of the n-electrode, and electrodes 9 and 10 are formed.
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