| 摘要 |
PURPOSE:To remove a damaged layer of an Si substrate and eliminate remaining reactive gas molecules and atoms from the surface of the Si substrate by etching the damaged layer at the low temperature about 400 deg.C and with good controllability. CONSTITUTION:A treatment gas is introduced into an evacuated vacuum apparatus while being evacuated. High power ultraviolet rays are applied to an Si substrate placed on a target and a damaged layer is etched. After the etching is completed, introduction of the treatment gas is discontinued and, while being evacuated to the high vacuum rate again, UV application only is performed to elevate the substrate temperature. In other words, halogen molecules and atoms adsorbed by the Si surface layer are dissociated under the elevated temperature and decreased pressure while the lights are being applied so as to make adsorbed atoms or molecules not to remain on the Si surface layer at all.
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