| 摘要 |
PURPOSE:To obtain a photoconductive member having excellent electrostatic chargeability, low residual potential, high sensitivity over a wide wavelength region, good adhesiveness to a substrate and excellent environment resistance by using microcrystalline silicon in at least part of the photoconductive member. CONSTITUTION:This photoconductive member has a conductive base 21, a barrier layer 22 formed on the base 21 and a photoconductive layer 23 formed on the barrier layer 22. At least part of the photoconductive layer is formed of the microcrystalline silicon contg. hydrogen and the average grain side of the microcrystalline silicon changes in the layer thickness direction. The photoconductive member which has high resistance and excellent electrostatic charge characteristic, has the high photosensitive characteristic in visible light and near IR region, permits easy production and has high practicability is thus obtd. |
