| 摘要 |
PURPOSE:To obtain high signal intensity while eliminating output characteristic variation with temperature by connecting the bases and common emitter of the 1st and the 2nd transistors (TR) to the 1st, the 2n,d and the 3rd current sources which generate current outputs proportional to absolute temperature. CONSTITUTION:The current sources 22, 21, and 23 which have temperature proportional characteristics are connected to the common emitter and bases of the TRs Q11 and Q12. When there is no signal, the base potential difference between the TRs Q11a and Q12 is denoted as VDD and collector currents are denoted as IC1 and IC2; and let VD0=2VT (thermal voltage of TR) at some temperature for simple explanation. Then, when the temperature varies from T to T(T), VD0, IC1, and IC2 are all proportional to the absolute temperature. Therefore, associative characteristics of VD0, IC1, and IC2 to temperature give an output voltage no temperature dependency. Namely, the output amplitude is not affected by temperature variation.
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