| 摘要 |
PURPOSE:To obtain a photoconductive member having excellent electrostatic chargeability, low residual potential, high sensitivity over a wide wavelength region, good adhesiveness to a substrate and excellent environment resistance by using microcrystalline silicon in at least part of the photoconductive member. CONSTITUTION:This photoconductive member has a conductive base 21, a barrier layer 22 formed on the base 21 and a photoconductive layer 23 formed on the barrier layer 22. At least parts of the barrier layer 22 is formed of the amorphous silicon contg. the element belonging to the group III or V of the periodic table and at least part of the photoconductive layer 23 is formed of the microcrystalline silicon contg. the element belonging to the group III or V of the periodic table. The proper region on the conductive base side of the barrier layer 22 and/or the proper region on the surface side of the photoconductive layer contains at least one kind of element selected from carbon, oxygen and nitrogen. The photoconductive member which has high resistance and excellent electrostatic charge characteristic, has the high photosensitive characteristic in visible light and near IR region, permits easy production and has high practicability is thus obtd. |
