摘要 |
PURPOSE:To obtain a photoconductive member having excellent electrostatic chargeableness, low residual potential, high sensitivity over a wide wavelength region, good adhesiveness to a substrate and excellent environment resistance by using microcrystalline silicon in at least part of the photoconductive member. CONSTITUTION:This photoconductive member has a conductive base 21, a barrier layer 22 formed on the base 21 and a photoconductive layer 23 formed on the barrier layer 22. The barrier layer 22 is formed of the amorphous silicon contg. hydrogen, the element belonging to the group III or V or periodic table and at least one kind of the element selected from carbon, oxygen and nitrogen. At least part of the photoconductive layer 23 is formed of microcrystalline silicon and the average grain size of the microcrystalline silicon changes in the layer thickness direction. The photoconductive member which has high resistance and excellent electrostatic charge characteristic, has the high photosensitive characteristic in visible light and near IR region, permits easy production and has high practicability is thus obtd. |