| 摘要 |
PURPOSE:To obtain high coupling efficiency by etching a part including a light guide except a crystal substrate partially, scribing the surface of the crystal substrate which is exposed by the etching, and cleaving the crystal substrate from the scribing position. CONSTITUTION:There are Si crystal, GaAs crystal, etc., as the crystal substrate which has cleaving property. A light guide layer 3 and a buffer layer 2 on the substrate 1 at the scribing position are etched partially. Then, a flaw (a) is made by a scriber in the top surface of the substrate 1 which is exposed by the etching, and a load is placed on the flaw (a) on the top surface from the reverse surface of the substrate 1. Consequently, stress is concentrated on the part of the flaw (a) to cleave the substrate 1 and also cut the light guide layer 3 and buffer layer 2 at the same time with the cleaving force, so end surfaces of light guide layers 3 are formed along the cleaved surfaces. Then, a light emitting element and an optical fiber are coupled directly with the end surfaces of the light guides 3 formed by cleaving the substrate 1. |
