| 摘要 |
PURPOSE:To obtain a photoconductive member having excellent electrostatic chargeability, low residual potential, high sensitivity over a wide wavelength region, good adhesiveness to a substrate and excellent environment resistance by using microcrystalline silicon in at least part of the photoconductive member. CONSTITUTION:This photoconductive member has a conductive base 21, a barrier layer 22 formed on the conductive base 21, a charge transfer layer 23 formed on the barrier layer 22 and a charge generating layer 24 formed on the charge transfer layer. The barrier layer 22 is formed of the amorphous silicon contg. the element belonging to the group III or V of the periodic table and at least one kind of the element selected from carbon, oxygen and nitrogen. At least part of the charge transfer layer 23 is formed of the amorphous silicon contg. hydrogen and at least part of the charge generating layer 23 is formed of microcrystalline silicon. The photoconductive member which has high resistance and excellent electrostatic charge characteristic, has the high photosensitive characteristic in visible light and near IR region, permits easy production and has high practicability is thus obtd. |
