| 摘要 |
PURPOSE:To obtain a photoconductive member having excellent electrostatic chargeableness, low residual potential, high sensitivity over a wide wavelength region, good adhesiveness to a substrate and excellent environment resistance by using microcrystalline silicon in at least part of the photoconductive member. CONSTITUTION:This photoconductive member has a conductive base 21, a barrier layer 22 formed on the base 21 and a photoconductive layer formed on the barrier layer 22. The barrier layer 22 is formed of the microcrystalline silicon contg. hydrogen, the element belonging to the group III or V of periodic table and at least one kind of the element selected from carbon, oxygen and nitrogen. The photoconductive layer has the 1st layer 23 consisting of microcrystalline silicon contg. hydrogen and the 2nd layer 24 consisting of amorphous silicon contg. hydrogen and carbon. The 1st layer 23 and the 2nd layer 24 are laminated in the layer thickness direction of the photoconductive layer. The photoconductive member which has high resistance and excellent electrostatic charge characteristic, has the high photosensitive characteristic invisible light and near IR region, permits easy production and has high practicability is thus obtd. |
